Part Number Hot Search : 
KWDCTAAT KA5M0280 1235G2 1210D 0054103 R2221 PCA85232 C1106
Product Description
Full Text Search
 

To Download TLP3041S Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 1 toshiba photocoupler gaas ired & photo-triac tlp3041(s),tlp3042(s),tlp3043(s) office machine household use equipment triac driver solid state relay the toshiba tlp3041 (s), tlp3042 (s), tlp3043 (s) consist of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic dip package. all parameters are tested to the specification of tlp3041, tlp3042, tlp3043.  peak off-state voltage : 400 v (min)  trigger led current : 15 ma (max) (tlp3041) 10 ma (max) (tlp3042) 5 ma (max) (tlp3043)  on-state current : 100 ma (max)  ul recognized : ul1577, file no. e67349  isolation voltage : 5000 vrms (min)  option (d4) type vde approved : din vde0884 / 06.92 certificate no. 68329 maximum operating insulation voltage : 890 vpk highest permissible over voltage : 8000 vpk note: when a vde0884 approved type is needed,please designate the ?option (d4) ?  device construction 7.62mm pich standard type 10.16 mm pich (lf2) type creepage distance 7.0 mm (min) 8.0 mm (min) clearance 7.0 mm (min) 8.0 mm (min) insulation thickness 0.5 mm (min) 0.5 mm (min) 1: anode 2: cathode 3: n.c. 4: terminal 1 6: terminal 2 jedec D eiaj D toshiba 11-7a9 weight: 0.39g unit: mm pin configuration ( to p view )
tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 2 maximum ratings (ta = 25     c) characteristic symbol rating unit forward current i f 50 ma forward current derating (ta 53  c) ? i f /  c  0.7 ma /  c peak forward current (100  s pulse, 100pps) i fp 1 a power dissipation p d 100 mw power dissipation derating (ta 25  c) ? p d /  c  1.0 mw /  c reverse voltage v r 5 v led junction temperature t j 125  c off-state output terminal voltage v drm 400 v on-stage rms ta = 25  c 100 current ta = 70  c i t(rms) 50 ma on-state current derating (ta 25  c) ? i t /  c  1.1 ma /  c peak on-stage current (100  s pulse, 120pps) i tp 2 a peak nonrepetitive surge current (p w = 10ms, dc = 10%) i tsm 1.2 a power dissipation p d 300 mw power dissipation derating (ta 25  c) ? p d /  c  4.0 mw /  c detector junction temperature t j 115  c storage temperature range t stg  55  150  c operating temperature range t opr  40  100  c lead soldering temperature (10s) t sol 260  c total package power dissipation p t 330 mw total package power dissipation derating (ta 25  c) ? p t /  c  4.4 mw /  c isolation voltage (ac, 1 min., r.h. 60%) (note 1) bv s 5000 vrms note 1: device considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. recommended operating condistions characteristic symbol min typ. max unit supply voltage v ac   120 vac forward current i f * 15 20 25 ma peak on-stage current i tp   1 a operating temperature t opr  25  85  c * : in the case of tlp3042
tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 3 individual electrical characteristics (ta = 25     c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10ma 1.0 1.15 1.3 v reverse current i r v r = 5v   10  a led capacitance c t v = 0, f = 1mhz  10  pf peak off-state current i drm v drm = 400v  10 100 na peak on-stage voltage v tm i tm = 100ma  1.7 3.0 v holding current i h   0.6  ma critical rate of rise of off- state voltage dv / dt v in = 120vrms, ta = 85  c (fig.1) 200 500  v /  s detector critical rate of rise of commutating voltage dv / dt(c) v in = 30vrms, it = 15ma (fig.1)  0.2  v /  s coupled electrical characteristics (ta = 25     c) characteristic symbol test condition min typ. max unit tlp3041   15 tlp3042  5 10 trigger led current tlp3043 i ft v t = 3v   5 ma inhibit voltage v ih i f = rated i ft   40 v leakage in inhibited state i ih i f = rated i ft v t = rated v drm  100 300  a capacitance input to output c s v s = 0, f = 1mhz  0.8  pf isolation resistance r s v s = 500v (r.h. 60%) 5  10 10 10 14   ac, 1 minute 5000   ac, 1 second (in oil)  10000  vrms isolation voltage bv s dc, 1 minute (in oil)  10000  vdc fig. 1 dv / dt test circuit
tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 4
tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 5
tlp3041(s),tlp3042(s),tlp3043(s) 2001-05-14 6  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk.  gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage.  the products described in this document are subject to the foreign exchange and foreign trade laws.  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others.  the information contained herein is subject to change without notice. 000707ebc restrictions on product use


▲Up To Search▲   

 
Price & Availability of TLP3041S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X